[24p-P09-1~5] 3.11 Photonic structures and phenomena

[24p-P09-3] Toward the development of nanocavity Raman silicon laser excited in a 1.1 μm wavelength band

〇(B)Yu Shimomura¹, Masanao Fujimoto¹, Takashi Asano², Susumu Noda², Yasushi Takahashi¹ (1.Osaka Pref. Univ., 2.Kyoto Univ.)

Keywords:nanocavity, Raman laser

We aim to excite in the 1.1 μm band, which is near the Si band gap. In this wavelength range, further reduction of the threshold value by resonant Raman scattering is expected. For continuous operation of the nano-cavity Raman Si laser, a Q-value of at least 10,000 is required, but the Q-value in the 1.1 μm band has not been reported because it has been limited to PL measurements. In this paper, we report the measurement of the resonance spectrum using a wavelength tunable laser and obtained a high Q-value.