2022年第69回応用物理学会春季学術講演会

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一般セッション(口頭講演)

15 結晶工学 » 15.5 IV族結晶,IV-IV族混晶

[25a-D114-1~7] 15.5 IV族結晶,IV-IV族混晶

2022年3月25日(金) 09:30 〜 11:15 D114 (D114)

志村 洋介(静岡大)

10:30 〜 10:45

[25a-D114-5] Tensile Strained n-type Ge Grown by Continuous Wave Laser Annealing

〇Rahmat Hadi Saputro1,2、Ryo Matsumura1、Tatsuro Maeda3、Naoki Fukata1,2 (1.NIMS、2.Univ. of Tsukuba、3.AIST)

キーワード:Germanium, Strain, Polycrystalline

Germanium (Ge) is one of the promising materials for optoelectronic device integration. It is widely known that Ge is an indirect-band semiconductor like Silicon (Si). However, by introducing tensile strain, the small difference (0.136 eV) between direct and indirect gaps can be reduced. Furthermore, it was reported that in 0.2-0.3% tensile strained Ge, n-type doping in the order of 1019 cm-3 could result in quasi direct-band light emission. Recently, we have successfully crystallized amorphous Ge on quartz substrate by continuous wave laser annealing (CWLA), which also resulted in the introduction of 0.55-0.62% tensile strain. In this study, we applied the similar technique for the Sb-doped n-type Ge film. The results show the successful growth of tensile strained n-Ge films by the CWLA method.