[25a-E102-1~5] 17.3 Layered materials

[25a-E102-4] Controlling magnetic properties of Cr₃Te₄ by ion gating

〇Shun Kajihara¹, Hideki Matsuoka², Yue Wang¹, Masaki Nakano^1,2,3, Yoshihiro Iwasa^1,2 (1.The Univ. of Tokyo, 2.RIKEN CEMS, 3.JST-PRESTO)

Keywords:thin film, magnetism

It is known that the magnetic properties of Cr₃Te₄ thin film samples, which exhibit room temperature ferromagnetism in bulk, can be significantly modulated by adjusting the thin film fabrication conditions, such as the ferromagnetic transition temperature and magnetic anisotropy. On the other hand, carrier doping by ion gating is known to be an effective method to control the physical properties of two-dimensional materials. In this presentation, we report the results of the application of ion gating to thin film samples of Cr₃Te₄ prepared by MBE method.