The 69th JSAP Spring Meeting 2022

Presentation information

Oral presentation

10 Spintronics and Magnetics » 10.3 Spin devices, magnetic memories and storages

[25a-E201-1~11] 10.3 Spin devices, magnetic memories and storages

Fri. Mar 25, 2022 9:00 AM - 12:00 PM E201 (E201)

Masuda Keisuke(物材機構), Shoya Sakamoto(Tokyo Univ.)

9:45 AM - 10:00 AM

[25a-E201-4] The Importance of Interface in Controlling Mass Gapped Dirac Cone of Graphene Through Pseudospin via Magnetic Proximity Effect

〇(D)Yusuf Wicaksono1, Halimah Harfah1, Gagus K. Sunnardianto2,4, Muhammad A. Majidi3, Koichi Kusakabe4 (1.Osaka Univ, 2.BRIN Indonesia, 3.Univ. Indonesia, 4.Hyogo Univ.)

Keywords:graphene, in-plane magnetoresistance

Our previous study showed that when Ni/graphene/Ni heterostructure is considered, the gapped Dirac cone of graphene can be controlled through pseudospin by changing the Ni slabs' magnetic alignment. The charge transfer from Ni to C atoms leads to an induced magnetic moment on the graphene layer. When upper and lower Ni(111) slabs have anti-parallel (parallel) magnetic-moment configuration, the induced magnetic moment on carbon atoms of sublattices A and B will have an antiferromagnetic (ferromagnetic) spin configuration. A mass gapped Dirac cone is open (close) when the alignment is anti-parallel (parallel) configuration due to broken (preservation) of graphene chiral symmetry. Here we present a further study where the control of pseudospin of graphene was considered through magnetic proximity effect of Ni surface state. The proximity effect was considered by introducing a separation between Ni slabs and graphene with hBN layer and various adsorbed atomic gas (H, O, F, P, and S). Interestingly, the chemical and physical properties at the interface between Ni slabs and separator significantly affect the gap size and the mass-gapped Dirac cone position. These results lead to the perfection of the device toward efficient and novel use.