[25a-E202-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[25a-E202-1] Effects of gamma-ray irradiation on electrical and optical properties of Ga-doped ZnO films

〇Tetsuya Yamamoto^3,4, Catalin Martin¹, Valentin Craciun², Hisao Makino⁴ (1.RCNJ, 2.NILPRP, 3.Kochi Univ. Tech., Res. Inst., 4.Kochi Univ. Tech.)

Keywords:zinc oxide, gamma-ray irradiation effects, total ionizing dose effect

Radiation-resistant materials are expected to be required for facility components (e.g., window materials) for new energy sources (e.g., nuclear fusion energy) and for spacecraft such as artificial sanitation. Zinc oxide (ZnO) is one of the candidates. On the other hand, the crystal structure change in ZnO-based thin films induced by uncharged radiation gamma-rays provides important insights into the characteristics of point defects. In this paper, we report the results and discussion of the effects of gamma-ray irradiation on highly transparent conductive Ga-doped ZnO (GZO) films from the viewpoint of both electrical and optical properties, since gamma-rays are expected to cause ionization and secondary electron generation in the films.