The 69th JSAP Spring Meeting 2022

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[25a-E203-1~11] 15.4 III-V-group nitride crystals

Fri. Mar 25, 2022 9:00 AM - 12:00 PM E203 (E203)

Hiroto Sekiguchi(Toyohashi Univ. of Tech.), Momoko Deura(Univ. of Tokyo)

9:45 AM - 10:00 AM

[25a-E203-4] Effects of MOVPE Growth Temperature and Mesa Size on the Surface Morphologies of Step-Free AlN Films

〇(M1)Yuto Yamanaka1, Kanako Shojiki1, Shigeyuki Kuboya2, Kenjiro Uesugi2,3, Hideto Miyake1,3 (1.Grad. Sch. of Eng. Mie Univ., 2.SPORR Mie Univ., 3.Grad. Sch. of RIS. Mie Univ.)

Keywords:nitride semiconductor, metalorganic vapor phase epitaxy, surface morphology