[25a-E301-1~9] CS.9 Code-sharing Session of 13.7 & 15.6

[25a-E301-1] High-sensitive temperature measurement by silicon vacancy quantum sensor using simultaneous resonance of ground and excited states

〇Yuichi Yamazaki¹, Yuta Masuyama¹, Kazutoshi Kojima², Hidekazu Tsuchida³, Norihiro Hoshino³, Takeshi Ohshima¹ (1.QST, 2.AIST, 3.CRIEPI)

Keywords:SiC, silicon vacancy, simultaneous resonance

This is a new temperature measurement method that utilizes the phenomenon that the ground state ODMR contrast decreases under simultaneous ground and excited state resonance. We can determine the excited state resonance frequency from the change in contrast. Compared with the conventional method, the new method provides a large signal change, which enables highly sensitive measurements.