[25a-E304-1~9] 12.2 Characterization and Materials Physics

△ [25a-E304-9] Evaluation of Carrier Transport in Organic Antiambipolar Transistors by Operando Photoelectron Emission Microscopy

〇(M1)Soichiro Takeiri^1,2, Ryoma Hayakawa¹, Yoichi Yamada², Yutaka Wakayama¹, Keiki Fukumoto³ (1.NIMS, 2.Tukuba Univ., 3.KEK)

Keywords:organic antiambipolar transistor, operando photoelectron emission microscopy, carrier transport mechanism

Organic antiambipolar transistors (AATs) have p-n junctions at the center of the transistor channels. This structural feature enables a negative differential transconductance at room temperature. Namely, the drain current increases and then decreases at the certain gate bias voltage. Therefore, AATs have attracted a lot of attention due to this feature. However, the detailed carrier transport mechanism has yet to be fully understood. In this sturdy, we used operando photoemission electron microscopy to visualize the conductive electrons in the transistor channel. Based on the results, we discussed the detailed carrier transport mechanism in the organic AAT.