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[25a-F307-7] Growth of thick α-Ga2O3 films
Keywords:gallium oxide
α-Ga2O3, which is a widebandgap semiconductor material, has received attention for applications. It is important the growth of thick films for application and characterization of α-Ga2O3. In this work, we investigate the influence of substrate temperature and source solution composition on the growth of α-Ga2O3 thick films by using mist-CVD. In the growth of thick films, α and κ-phase were grown at low HCl concentration of source solution ,while only α phase was grown at high HCl concentration. Furthermore, it was found that the lower substrate temperature is and the higher the concentration of HCl is, the more the film thickness increase.