[25a-P05-1~3] 15.1 Bulk crystal growth

[25a-P05-2] Numerical Modeling and Evaluation of Constitutional Supercooling during Cz Silicon Growth

〇Yuji Mukaiyama¹, Yuki Fukui², Toshinori Taishi², Vladimir Kalaev³, Vladimir Artemiev³, Koji Sueoka⁴ (1.Graduate School of Okayama Pref. Univ., 2.Shinshu Univ., 3.STR Group, Inc., 4.Okayama Pref. Univ.)

Keywords:Silicon, Constitutional supercooling, Cz method

It is known that the quality of Si single crystal deteriorates due to excessive heavy doping during growth process by the Cz method. The cause of quality deterioration is considered to be morphological instability due to the compositional supercooling of the solid-liquid interface. In order to improve high quality of heavy-doped Si single crystals, it is necessary to control the compositional supercooling. In this study, we constructed a numerical analysis model of compositional supercooling in Si single crystal growth by the Cz method, and evaluated the analysis results using the experimental results.