[25p-D315-1~18] 3.9 Terahertz technologies

[25p-D315-14] Pulse Response of Asymmetric Dual-Grating-Gate HEMT Terahertz Detector

〇Takumi Negoro¹, Kenichi Narita¹, Yuma Takida², Hiromasa Ito², Hiroaki Minamide², Taiich Otsuji¹, Akira Satou¹ (1.RIEC, Tohoku Univ., 2.RIKEN, RAP)

Keywords:Terahertz Detection, HEMT

As the gate-readout configuration in our InP-based dual-grating-gate high-electron-mobility transistors, we measured the difference of pulse response depending on the gate bias voltage. Then we clarified the phenomenon by examining the band states at each gate bias voltage, and concluded that the donor level in the carrier supply layer was the cause.