[25p-E102-1~19] 17.2 Graphene

[25p-E102-8] THz-TDSE Characterization of Electrical Properties for Graphene Grown on r-plane Sapphire

〇(M2)Hiroki Suzuki¹, Hayato Watanabe¹, Takashi Fujii^1,2, Shinichiro Mouri¹, Toshiyuki Iwamoto², Yasuhiro Fukunishi³, Shigeya Naritsuka³, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.PNP, 3.Meijo Univ.)

Keywords:graphene, tera hertz, time domain spectroscopic ellipsometry

We have developed a technique to evaluate and analyze the electrical properties of semiconductor epitaxial films using THz-TDSE. We are now applying this technique to the evaluation and analysis of the electrical properties of graphene. It is now possible to grow single-domain graphene directly on a terahertz-band-permeable insulating substrate by the CVD method. However, since this is an anisotropic substrate, it is necessary to analyze the polarization taking the anisotropy into account. we present a technique for analyzing the electrical properties of graphene considering the anisotropic substrate.