[25p-E201-1~7] Green Innovation by Spintronics

[25p-E201-1] Green Innovation by Spintronics -Overview-

〇Shinji Yuasa¹ (1.AIST)

Keywords:spintronics, magnetic tunnel junction, MRAM

High-performance magnetic sensors and non-volatile memory STT-MRAM, which utilize MgO-based magnetic tunnel junctions, have been commercialized. To further reduce the power consumption of such spintronic devices, voltage-control of magnetization based on VCMA effect is desirable. In the presentation, we are going to overview voltage-controlled MRAM (VC-MRAM) as well as novel spintronic devices and circuit architecture based on spintronic phenomena and effects other than magnetoresistance effect and spin manipulation.