The 69th JSAP Spring Meeting 2022

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[25p-E202-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 25, 2022 1:30 PM - 5:30 PM E202 (E202)

Rie Togashi(Sophia Univ.), Magari Yusaku(Simane Univ.)

4:30 PM - 4:45 PM

△ [25p-E202-12] Carrier transport in α-Ga2O3 on m-plane sapphire and effects of dislocations on it

〇(M2)Hitoshi Takane1, Hirokazu Izumi2, Takeru Wakamatsu1, Katsuhisa Tanaka1, Kentaro Kaneko1 (1.Kyoto Univ., 2.Hyogo Pref. Inst. of Tech.)

Keywords:gallium oxide, carrier transport

Carrier transport mechanisms in α-Ga2O3 on m-plane sapphire with different carrier concentrations were investigated by temperature-dependent Hall effect measurements. Our experiments and analysis revealed that dislocation scattering was the dominant scattering mechanisms in a non-degenerate α-Ga2O3. On the other hand, in degenerate α-Ga2O3, although the dislocation density was comparable to the non-degenerate one, the mobility was independent on temperature and dominated by ionized impurity scattering.