The 69th JSAP Spring Meeting 2022

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[25p-E202-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 25, 2022 1:30 PM - 5:30 PM E202 (E202)

Rie Togashi(Sophia Univ.), Magari Yusaku(Simane Univ.)

4:45 PM - 5:00 PM

[25p-E202-13] Growth and electrical properties of α-In2O3 by Mist CVD using In2O3 powder or In(acac)3 as source precursor

〇Akito Taguchi1, Kentaro Kaneko2, Shizuo Fujita2, Takeyoshi Onuma1, Tohru Honda1, Tomohiro Yamaguchi1 (1.Kogakuin Univ., 2.Kyoto Univ.)

Keywords:Mist CVD, indium oxide, source precursor

The electrical properties and growth of α-In2O3 films by mist CVD using In2O3 powder or In(acac)3 as a source precursor is conducted. The cubic-phase of In2O3 were decreased with increasing HCl concentrations in the source solution, resulting in the observation of pure α-In2O3. The pure α-In2O3 films grown with In2O3 powder shows lower carrier concentration and higher Hall mobility than those grown with In(acac)3, and Hall mobility of over 250 cm2/Vs and residual carrier concentration of the order of 1017 cm-3 were obtained.