[25p-E202-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [25p-E202-13] Growth and electrical properties of α-In₂O₃ by Mist CVD using In₂O₃ powder or In(acac)₃ as source precursor

〇Akito Taguchi¹, Kentaro Kaneko², Shizuo Fujita², Takeyoshi Onuma¹, Tohru Honda¹, Tomohiro Yamaguchi¹ (1.Kogakuin Univ., 2.Kyoto Univ.)

Keywords:Mist CVD, indium oxide, source precursor

The electrical properties and growth of α-In₂O₃ films by mist CVD using In₂O₃ powder or In(acac)₃ as a source precursor is conducted. The cubic-phase of In₂O₃ were decreased with increasing HCl concentrations in the source solution, resulting in the observation of pure α-In₂O₃. The pure α-In₂O₃ films grown with In₂O₃ powder shows lower carrier concentration and higher Hall mobility than those grown with In(acac)₃, and Hall mobility of over 250 cm²/Vs and residual carrier concentration of the order of 10¹⁷ cm^-3 were obtained.