Fabrication of SnO<sub>2</sub>-based Deep Ultraviolet Transparent Conducting Thin Films on AlN

Yo Nagashima, Yasushi Hirose, Masato Tsuchii, Michitaka Fukumoto, Tetsuya Hasegawa

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[25p-E202-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 25, 2022 1:30 PM - 5:30 PM E202 (E202)

Rie Togashi(Sophia Univ.), Magari Yusaku(Simane Univ.)

5:15 PM - 5:30 PM

△ [25p-E202-15] Fabrication of SnO₂-based Deep Ultraviolet Transparent Conducting Thin Films on AlN

〇(M2)Yo Nagashima¹, Yasushi Hirose¹, Masato Tsuchii¹, Michitaka Fukumoto¹, Tetsuya Hasegawa¹ (1.Tokyo Univ.)

Keywords:ultraviolet-transparent conductor, tin oxide

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Presentation information

[25p-E202-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [25p-E202-15] Fabrication of SnO2-based Deep Ultraviolet Transparent Conducting Thin Films on AlN

△ [25p-E202-15] Fabrication of SnO₂-based Deep Ultraviolet Transparent Conducting Thin Films on AlN