[25p-E202-1~15] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▼ [25p-E202-7] Effect of Aging Time and Fuel Content in Silicon-Tin-Oxide Thin Films Fabricated by Solution Combustion Synthesis

〇(D)CandellGrace Paredes Quino¹, Juan Paolo Bermundo¹, Mutsunori Uenuma¹, Yukiharu Uraoka¹ (1.NAIST)

Keywords:Solution combustion synthesis, oxide semiconductor, solution processing

This work demonstrates the first use of solution combustion synthesis (SCS) in fabricating silicon-tin-oxide (SixSnyO) films via solution processing. SCS is an approach used in lowering the processing temperature of thin films deposited through solution processing. SixSnyO thin films used for TFT fabrication have been used in previous works but only via vacuum processing. Our aim is to produce solution processed SixSnyO thin film and improve its qualities by using SCS. We also want to determine the effect of solution aging time and fuel content to the thin films. Comparison of the two SixSnyO films showed higher percentage of M-O bonds in the O1s peak (530.5 eV) for the film with the higher fuel content. Also, using higher fuel produced a more uniform film without voids and depressions. In conclusion, our results show that SCS can be used to fabricate SixSnyO with high M-O networks at 300 C. This SixSnyO thin film is a potential semiconductor material for high performance TFT device.