[25p-E203-1~17] 15.4 III-V-group nitride crystals

▼ [25p-E203-12] Mechanism of electrochemical anodic etching of n-GaN in oxalic acid

〇(D)Artem Shushanian¹, Daisuke Iida¹, Zhe Zhuang¹, Yu Han¹, Kazuhiro Ohkawa¹ (1.KAUST)

Keywords:gallium nitride, wet etching

We investigated the anodic electrochemical etching reaction of n-GaN in oxalic acid media. The formation of porous nanostructures were investigated by SEM imaging and the reaction products from liquid and vapor phase were analysed by a number of physicochemical methods. Thus, we present a chemical mechanism of electrooxidation of n-GaN and we consider it to involve 6 electrons.