16:30 〜 16:45
▼ [25p-E203-12] Mechanism of electrochemical anodic etching of n-GaN in oxalic acid
キーワード：gallium nitride, wet etching
We investigated the anodic electrochemical etching reaction of n-GaN in oxalic acid media. The formation of porous nanostructures were investigated by SEM imaging and the reaction products from liquid and vapor phase were analysed by a number of physicochemical methods. Thus, we present a chemical mechanism of electrooxidation of n-GaN and we consider it to involve 6 electrons.