[25p-E204-1~17] 6.2 Carbon-based thin films

[25p-E204-5] Generation of boron vacancy in hBN by high temperature ion irradiation

〇Tetta Suzuki^1,2, Yuichi Yamazaki², Takashi Taniguchi³, Kenji Watanabe³, Yu-Ichiro Matsushita⁴, Yusuke Nishiya⁴, Yuta Masuyama², Yasuto Hijikata¹, Takeshi Ohshima² (1.Saitama Univ., 2.QST, 3.NIMS, 4.Tokyo Tech.)

Keywords:hexagonal boron nitride, boron vacancy, ODMR

Generation of boron vacancy defects (V_B) in hexagonal boron nitride (hBN) was carried out by high-temperature ion irradiation, which is expected to have a higher ability to remove undesired defects. V_B was formed by irradiating hBN with N₂ ions under high temperature of 200~800℃. The ODMR spectra measured from the fabricated samples show that high-temperature irradiation is an effective method for improving ODMR contrast and also for recovering disrupted crystal structures.