[25p-E206-1~9] 12.5 有機太陽電池

▼ [25p-E206-1] Morphology and Effects of an S-PEDOT Film on Neutral Beam Etched Silicon Nanopillar Structures for Hybrid Solar Cells

〇(D)Aditya Saha¹、Sou Takeuchi¹、Daisuke Ohori¹、Takahiko Sasaki²、Hidenori Okuzaki³、Hirokazu Yano⁴、Seiji Samukawa^1,5 (1.IFS, Tohoku Univ.、2.IMR, Tohoku Univ.、3.Yamanashi Univ.、4.OMRL, Tosoh Corp.、5.AIMR, Tohoku Univ.)

キーワード：PEDOT, Hybrid Solar Cell, Neutral Beam Fabrication

Poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) has been one of the most successful conductive polymers of the last two decades. Consequently, hybrid solar cell architectures which use n-type Si as the absorber and PEDOT:PSS as the carrier-selective contact have been able to achieve device efficiencies exceeding 20%. However, on nanostructures which are necessary to improve photo-absorption and carrier separation, PEDOT:PSS films are unable to achieve good coverage or reach the bottom surface of the substrate. This reduces the overall area of contact and creates large voids which reduce the reliability if the final device. A highly conductive self-doped PEDOT (S-PEDOT) can potentially eliminate these disadvantages in processability of PEDOT:PSS by completely enclosing even fine nanopillar structures created through a self-assembled ferritin mask and neutral beam etching. Using this technique were able to increase the area of contact between S-PEDOT and the silicon substrate by a factor of 2.4. The purpose of this presentation is to demonstrate an Si:S-PEDOT heterojunction that will potentially improve both the optical and electric performance of future hybrid solar cells.