[25p-E305-1~18] 6.1 Ferroelectric thin films

△ [25p-E305-1] Ferroelectric properties of epitaxial (Al,Sc)N thin films grown on Nb:SrTiO₃ substrates

〇Kota Hasegawa^1,2, Takao Shimizu², Jun Chen², Takeo Ohsawa², Isao Sakaguchi^1,2, Naoki Ohashi^1,2,3 (1.Kyushu Univ., 2.NIMS, 3.Tokyo tech)

Keywords:ferroelectrice, aluminum nitride, scandium

Sputtering deposition of (Al,Sc)N films on (111) face of Nb-doped SrTiO₃ was examined in search for a good lattice matched bottom electrode layer appropriate for fabrication of high quality ferroelectric (Al,Sc)N film. After optimization of sputteirng conditions, such as gas composition and pressure, epitaxial (Al,Sc)N films with an in-plane epitaxial relationship of (Al,Sc)N [100]//Nb:STO[1-10] was obtained. The obtained (Al,Sc)N film exhibited well-defined polarity switching behavior by application of electric field.