The 69th JSAP Spring Meeting 2022

Presentation information

Oral presentation

13 Semiconductors » 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[25p-E307-1~15] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

Fri. Mar 25, 2022 1:30 PM - 5:30 PM E307 (E307)

Takeshi Momose(Univ. of Tokyo), Osamu Sugiura(千葉工大)

1:45 PM - 2:00 PM

[25p-E307-2] Potential Simulation of Electric Double Layer by New Electroplating Technology

〇Akira Matsushima1, Haruo Iwatsu2 (1.FAST, Kumamoto Univ., 2.POIE, Kumamoto Univ.)

Keywords:electroplating, electric double layer, computational electromagnetics

In the process of electroplating, electric double layers are formed due to the Coulomb force between positive ions in the electrolytic solution and electrons in the cathode, which causes reduction upon contact of the charges. In order to advance the micro-wiring technology, it is important to get hold of the ion distribution just before starting the reduction in accordance with the electrode shapes. In this study, from the viewpoint of computational electromagnetics, we obtain the potential distribution by solving the Poisson-Boltzmann equation by means of the finite element method.