[25p-P01-1~19] 6.3 Oxide electronics

[25p-P01-18] Non-destructive spectral analysis of Al_xGa_1-xN films by synchrotron soft X-ray photoelectron spectromicroscopy

〇(M1C)Shingo Takezawa¹, Obama Roki², Zhang Wenxiong³, Hukidome Hirokazu², Watanabe Issei⁴, Imura Masataka⁵, Tsuda Shunsuke⁵, Kotsugi Masato¹, Nagamura Naoka^1,5,6 (1.Tokyo Univ. of Science, 2.Tohoku Univ., 3.The Univ. of Tokyo, 4.NICT, 5.NIMS, 6.JST PRESTO)

Keywords:Wide gap semiconductor, photoelectron spectroscopy

III-V semiconductors are attracting attention as materials for light-emitting devices and high-frequency devices. However, there are few examples of non-destructive measurements of III-V semiconductors by photoemission spectroscopy due to charging problems. We have succeeded in obtaining photoemission spectra of AlGaN samples using focused synchrotron radiation, which is less affected by charging. In this presentation, we will show an example of depth profile analysis.