The 69th JSAP Spring Meeting 2022

Presentation information

Poster presentation

13 Semiconductors » 13.3 Insulator technology

[25p-P05-1~2] 13.3 Insulator technology

Fri. Mar 25, 2022 1:30 PM - 3:30 PM P05 (Poster)

1:30 PM - 3:30 PM

[25p-P05-2] Dependence of activation energy for mobility of ions in Si3N4 and SiO2 films on ion radius

〇Tomoki Oku1, Masahiro Totsuka1, Hajime Sasaki1 (1.Mitsubishi Electric)

Keywords:humidity resistance, ion contamination, molecular orbital calculation

The formation energy delta Hd during the permeation of monovalent and divalent ions in the SiNx and SiOx films was calculated by the semi-empirical molecular orbital method. The results did not agree with the expectation that the larger the ionic radius, the more difficult it is to enter the membrane. Assuming that delta Hd is equal to mesh deformation and electrostatic interaction, it can be explained that delta Hd is smaller for divalent ions than for monovalent ions, but it cannot be explained that delta Hd for Cs +, Sr2 +, and Ba2 + is smaller. The calculation results show that the charges of these ions are smaller than +1 and +2, which is considered to be the reason why delta Hd is small.