[25p-P06-1~5] 15.7 Crystal characterization, impurities and crystal defects

[25p-P06-5] Effect of ion implantation/thermal annealing on 0.88 eV hole trap in p-GaN grown by MOVPE

〇Yutaka Tokuda¹, Kazuyoshi Tomita², Tetsu Kachi², Joji Ito³, Takahide Yagi³ (1.Aichi Inst. of Tech., 2.Nagoya Univ., 3.SHI-ATEX Co., Ltd.)

Keywords:thermal annealing

It has been reported that 0.88 eV hole trap observed in GaN grown by MOVPE is identified as a carbon on nitrogen site (C_N). On the other hand, the concentration of 0.88 eV hole trap is found to be decreased by hydrogen or He ion implantation, which suggests the formation of C_N complexes with ion implantation-induced defects. In this work, we have studied the effect of prolonged high temperature annealing on the concentration of 0.88 eV hole trap. The samples were n⁺pp⁺ junctions grown by MOVPE on n⁺-GaN substrates. The annealing was performed at 850℃ for 5 and 300 min. The characterization of traps was made by DLTS. The result indicates that the concentration of 0.88 eV hole trap for samples annealed for 300 min is smaller than that for 5 min, which might be ascribed by the formation of C_N complexes with high temperature-process-induced defects.