[25p-P09-1~11] 3.13 Semiconductor optical devices

[25p-P09-8] Effect of film quality of nickel oxide as an electron injection blocking layer in photoelectric conversion film stacked imaging devices

〇Keitada Mineo¹, Shigeyuki Imura¹, Kazunori Miyakawa¹, Mutsumi Sugiyama², Masakazu Nanba¹ (1.NHK STRL, 2.Tokyo Univ. Sci.)

Keywords:Ni oxide, Image sensor, Gallium oxide

We are trying to realize a high-sensitivity image sensor using a photoelectric conversion film with crystalline selenium as the absorption layer and gallium oxide and nickel oxide as the layers that prevent the injection of holes and electrons from the electrodes, respectively. We have proposed a photoelectric conversion film bonding imaging device in which the photoelectric conversion film and CMOS circuit are individually fabricated on different substrates and then bonded together. We have succeeded in obtaining images with a magnification of 3 times. In this paper, we report on the effect of the film quality of nickel oxide, the electron injection blocking layer, on the characteristics of the device.