[26a-E202-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[26a-E202-6] Growth of rutile Ge_xSn_1-xO₂ alloy thin films and their basic properties

〇(M2)Hitoshi Takane¹, Takeru Wakamatsu¹, Katsuhisa Tanaka¹, Takashi Shinohe², Kentaro Kaneko¹ (1.Kyoto Univ., 2.FLOSFIA)

Keywords:germanium oxide, tin oxide, alloy semiconductor

Rutile Ge_xSn_1-xO₂ alloy thin films (Ge compositions: x=0.00, 0.29, 0.41, 0.52, 0.87, 1.00) were grown by mist CVD. We analyzed them by spectroscopic ellipsometry (SE), Hall effect measurement. The SE revealed that bandgaps of the Ge_xSn_1-xO₂ increased with increases in the Ge compositions for x≤0.87. By the Hall effect measurements, conductivities of un-doped Ge_xSn_1-xO₂ with x=0.00, 0.29, 0.41, 0.52, 0.87 were confirmed.