10:30 AM - 10:45 AM
[26a-E202-6] Growth of rutile GexSn1-xO2 alloy thin films and their basic properties
Keywords:germanium oxide, tin oxide, alloy semiconductor
Rutile GexSn1-xO2 alloy thin films (Ge compositions: x=0.00, 0.29, 0.41, 0.52, 0.87, 1.00) were grown by mist CVD. We analyzed them by spectroscopic ellipsometry (SE), Hall effect measurement. The SE revealed that bandgaps of the GexSn1-xO2 increased with increases in the Ge compositions for x≤0.87. By the Hall effect measurements, conductivities of un-doped GexSn1-xO2 with x=0.00, 0.29, 0.41, 0.52, 0.87 were confirmed.