[26a-E202-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[26a-E202-8] Relationship between the deposition conditions and composition ratios in the fine channel mist CVD method for α-(Al_xGa_1-x)₂O₃

〇(B)Hiromu Susami¹, Tatsuya Yasuoka¹, Li Liu², T. Giang Dang², Toshiyuki Kawaharamura^1,2 (1.Kochi Univ. of Tech, 2.Res. Inst.)

Keywords:thin film, mist CVD, (AlxGa1-x)2O3

We have been developing a technique to control and improve the crystallinity, conductivity, surface roughness, and composition ratio of a-(AlxGa1-x)2O3 thin films using mist CVD, a non-vacuum functional thin film fabrication technique. In this paper, we report the effects of deposition conditions on the composition ratio, the raw material properties revealed by the experiments, and the properties of the fabricated samples.