Fabrication and temperature characteristics evaluation of 1550-nm band InAs/InGaAlAs quantum dots DFB laser with side grating

Runa Kaneko, Katsuhara Ryumi, Yabuki Ryota, Matsumoto Atsushi, Akahane Koichi, Matsushima Yuichi, Ishikawa Hiroshi, Utaka Katsuyuki

Presentation information

Oral presentation

3 Optics and Photonics » 3.13 Semiconductor optical devices

[26a-E301-1~9] 3.13 Semiconductor optical devices

Sat. Mar 26, 2022 9:30 AM - 12:00 PM E301 (E301)

Masakazu Arai(Univ. of Miyazaki)

10:30 AM - 10:45 AM

[26a-E301-4] Fabrication and temperature characteristics evaluation of 1550-nm band InAs/InGaAlAs quantum dots DFB laser with side grating

〇Runa Kaneko¹, Katsuhara Ryumi¹, Yabuki Ryota¹, Matsumoto Atsushi², Akahane Koichi², Matsushima Yuichi¹, Ishikawa Hiroshi¹, Utaka Katsuyuki¹ (1.Waseda Univ., 2.NICT)

Keywords:Quantum dots, Laser diode, DFB

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