[26a-E305-1~8] 9.3 ナノエレクトロニクス

▼ [26a-E305-3] Charge Carrier Transport in Quasi Two-Dimensional Colloidal Quantum Dots Superlattice Assembly

〇(D)Ricky Dwi Septianto^1,2、Retno Miranti¹、Takaaki Hikima³、Nobuhiro Matsushita²、Yoshihiro Iwasa^1,4、Satria Zulkarnaen Bisri^1,2 (1.RIKEN CEMS、2.Tokyo Inst. of Tech.、3.RIKEN SPring-8 Cent.、4.The Univ. of Tokyo)

キーワード：Colloidal quantum dots, Superlattice assembly, Field-effect-transistor

Colloidal semiconductor quantum dots (CQDs) are the most attractive nanostructured materials owing to their tunable properties, related to the confinement of electron wavefunction. In addition, the recent synthesis process enables precise control of size, shape, and composition of QDs materials. Self-assembling of QDs into quasi-two-dimensional superstructure has become attractive for researchers in the field with high expectations on revealing the fundamental understanding of charge carrier transport to accelerate technological advancement. Herein, we provide new insight into charge carrier transport through QDs superlattice assembly where a strong enhancement of device performance is demonstrated. The study on the charge carrier transport was performed in an extremely high charge density environment by employing ionic-liquid gating field-effect-transistor (FET). It is noteworthy that the electronic performance on QDs solid is determined by the size-related geometrical structure of the assembly. Therefore, the finding in this study will open a new window on the electronic transport perspective thus satisfying the scientific and technological interest.