2022年第69回応用物理学会春季学術講演会

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一般セッション(口頭講演)

9 応用物性 » 9.3 ナノエレクトロニクス

[26a-E305-1~8] 9.3 ナノエレクトロニクス

2022年3月26日(土) 09:00 〜 11:15 E305 (E305)

大矢 剛嗣(横国大)

09:45 〜 10:00

[26a-E305-4] Toward Electronic Phase Transition in Large-Area Colloidal Quantum Dot Assemblies

〇Satria Zulkarnaen Bisri1,2、Ricky Dwi Septianto1,2、Retno Miranti1、Takaaki Hikima3、Nobuhiro Matsushita2、Yoshihiro Iwasa1,4 (1.RIKEN CEMS、2.Tokyo Inst. Tech.、3.RIKEN SPring8 Ctr、4.Univ. of Tokyo)

キーワード:colloidal quantum dots, electron transport, delocalized transport

The controlled formation of epitaxially-connected colloidal semiconductor quantum dots (CQDs) has the potential to create materials with properties by design, from which distinctive rich electronic structure may emerge. Highly ordered superlattices and strong coupling between the CQDs are the first requirements that need to be overcome. Here we demonstrate the field-induced doping in the solution-processable CQD assemblies in which the electron transport transitioned from hopping transport to a more delocalized transport behavior. Temperature-dependent charge carrier transport measurements were performed in epitaxially-connected QD assembly. Charge transport in highly doped epitaxially-connected QDs strongly deviates from the conventional hopping process and is on the verge of acquiring a nearly complete delocalized charge transport process.