Keywords:semiconductor, methane, plasma
Methane is one of common gases used for semiconductor manufacturing processes, carbon nanotube (CNT), and diamond-like carbon (DLC) deposition using plasma processes, and it has very wide range of applications. In order to understand the mechanism of the plasma, modeling and simulation is highly needed and important. However, the reaction mechanism of methane plasma is really complicated and it goes to change as the process time. We built a two-dimensional axisymmetric model including 40 species (neutral and ions) and 389 gas phase reaction steps, with some surface reactions including deposition. This will be a base model to take into the one with more practical surface reactions into consideration in the future.