[26a-P05-1~5] 15.5 Group IV crystals and alloys

[26a-P05-3] Effects of etching depth on crack generation in strained SiGe films on mesa-patterned Ge

〇Youya Wagatsuma¹, Alam Md. Mahfuz^1,2, Kazuya Okada¹, Rena Kanesawa¹, Michihiro Yamada³, Kohei Hamaya³, Kentarou Sawano¹ (1.Tokyo City Univ., 2.Univ. of Barishal, 3.CSRN, Osaka Univ.)

Keywords:SiGe, Ge, strained