The 69th JSAP Spring Meeting 2022

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[26p-E202-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Mar 26, 2022 1:00 PM - 4:45 PM E202 (E202)

Kohei Sasaki(Novel Crystal Technology), Oshima Yuichi(NIMS)

1:00 PM - 1:15 PM

[26p-E202-1] Effect of HCl support on the α-Ga2O3 thin films fabrication

〇Tatsuya Yasuoka1, Li Liu2, Giang T. Dang2, Toshiyuki Kawaharamura1,2 (1.Kochi Univ. of Tech., 2.Res. Inst.)

Keywords:alpha Gallium Oxide, mist CVD

We report on the difference in film quality of α-Ga2O3 thin films prepared with HCl support by mist CVD.