The 69th JSAP Spring Meeting 2022

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[26p-E202-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Mar 26, 2022 1:00 PM - 4:45 PM E202 (E202)

Kohei Sasaki(Novel Crystal Technology), Oshima Yuichi(NIMS)

4:30 PM - 4:45 PM

▲ [26p-E202-14] X-ray Topography Observation of Vertical Bridgman and Edge-Defined Film-fed Growth-Grown (001) Single β-Ga2O3 Crystals

〇(M2)Muhidul Islam Chaman1, Keigo Hoshikawa2, Sayleap Sdoeung1, Makoto Kasu1 (1.SAGA UNIV., 2.SHINSHU UNIV.)

Keywords:beta-gallium oxide, X-ray topography, crystallographic defects

β-gallium oxide (β-Ga2O3) exhibits an ultrawide bandgap (4.8 eV) and a high breakdown field (8 MV/cm). Therefore, β-Ga2O3 is very promising for high-efficiency power devices. In addition, owing to its high growth rate, low-cost single-crystal β-Ga2O3 substrates can be synthesized readily using various melt growth techniques.
In this study, Synchrotron X-Ray topography (XRT) experiments were performed both in transmission and reflection geometry to determine b from g·b invisibility criteria for VB and EFG crystal.