Thermodynamic study of Ga2O3 growth using Ga2O and H2O source gases

Rie Togashi, Akari Suzuki, Haruka Ishida, Shigeyoshi Usami, Masayuki Imanishi, Masahiko Hata, Yusuke Mori

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[26p-E202-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Mar 26, 2022 1:00 PM - 4:45 PM E202 (E202)

Kohei Sasaki(Novel Crystal Technology), Oshima Yuichi(NIMS)

1:30 PM - 1:45 PM

[26p-E202-3] Thermodynamic study of Ga₂O₃ growth using Ga₂O and H₂O source gases

〇Rie Togashi¹, Akari Suzuki¹, Haruka Ishida¹, Shigeyoshi Usami², Masayuki Imanishi², Masahiko Hata³, Yusuke Mori² (1.Sophia Univ., 2.Osaka Univ., 3.Itochu Plastics Inc.)

Keywords:Ga2O3, OVPE, Thermodynamics

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Presentation information

[26p-E202-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[26p-E202-3] Thermodynamic study of Ga2O3 growth using Ga2O and H2O source gases

[26p-E202-3] Thermodynamic study of Ga₂O₃ growth using Ga₂O and H₂O source gases