3:15 PM - 3:30 PM
[26p-E202-9] Crystal structure changes during relatively low temperature heat treatment of Ga2O3 nanowire
Keywords:wide bandgap semiconductor, nanowire, Gallium Oxide
Oral presentation
21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
Sat. Mar 26, 2022 1:00 PM - 4:45 PM E202 (E202)
Kohei Sasaki(Novel Crystal Technology), Oshima Yuichi(NIMS)
3:15 PM - 3:30 PM
Keywords:wide bandgap semiconductor, nanowire, Gallium Oxide