Crystal structure changes during relatively low temperature heat treatment of Ga<sub>2</sub>O<sub>3</sub> nanowire

Keishiro Hirota, Kohki Mukai

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[26p-E202-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Mar 26, 2022 1:00 PM - 4:45 PM E202 (E202)

Kohei Sasaki(Novel Crystal Technology), Oshima Yuichi(NIMS)

3:15 PM - 3:30 PM

[26p-E202-9] Crystal structure changes during relatively low temperature heat treatment of Ga₂O₃ nanowire

〇(M2)Keishiro Hirota¹, Kohki Mukai¹ (1.Graduate School of Engineering Science, Yokohama National Univ.)

Keywords:wide bandgap semiconductor, nanowire, Gallium Oxide

« Previous in this session
Next in this session »

▲

Presentation information

[26p-E202-1~14] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[26p-E202-9] Crystal structure changes during relatively low temperature heat treatment of Ga2O3 nanowire

[26p-E202-9] Crystal structure changes during relatively low temperature heat treatment of Ga₂O₃ nanowire