[26p-E203-1~10] 15.4 III-V-group nitride crystals

[26p-E203-1] [The 43rd JSAP Paper Award Speech] Development of AlGaN UV-B LD and realization of room temperature pulse operation

〇Kosuke Sato^1,2, Shinji Yasue², Shunya Tanaka², Tomoya Omori², Kazuki Yamada², Sayaka Ishizuka², Shohei Teramura², Yuya Ogino², Sho Iwayama^2,3, Motoaki Iwaya², Hideto Miyake³, Tetsuya Takeuchi², Satoshi Kamiyama² (1.Asahi Kasei, 2.Meijo Univ., 3.Mie Univ.)

Keywords:laser diode, ultraviolet, AlGaN

We realized room temperature pulse operation of UV-B LD with threshold current density at 41.2 kA/cm² in 2020 by combining; lattice-relaxed thick n-Al_0.6Ga_0.4N underlying layer with threading dislocation density at lower than 10⁹ cm^-2, III-group composition graded p-AlGaN to achieve operation at high current density over 40 kAcm^-2 and vertical flat AlGaN mirror facet. Today, the threshold current density has been reduced at 9.4 kA/cm². Details are explained at the presentation.