[26p-E203-1~10] 15.4 III-V-group nitride crystals

△ [26p-E203-6] Fabrication of HfO₂/AlN Transverse Quasi-Phase-Matched Channel Waveguide for 230-nm Far-UV Second Harmonic Generation

〇Hiroto Honda¹, Yuya Tawara¹, Yasufumi Fujiwara¹, Kanako Shojiki^1,2, Hideto Miyake^2,3, Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Osaka Univ., 2.Mie Univ., 3.Regional Innovation Studies, Mie Univ.)

Keywords:Ultraviolet light, Nitride semiconductor, Optical Devices

Far-ultraviolet (far-UV) light near 230 nm in wavelength can be used for harmless disinfection and sterilization of the human body because it is absorbed by the stratum corneum, which is a surface layer of the skin without nucleic acids. We proposed and designed a linear/nonlinear transverse quasi-phase-matched (QPM) waveguide consisting of an amorphous thin film on AlN thin film for efficient second harmonic generation (SHG) using a nitride semiconductor with strong optical nonlinearity. In this presentation, we report on the fabrication of linear/nonlinear transverse QPM channel waveguides for 230 nm far-UV SHG.