The 69th JSAP Spring Meeting 2022

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3 Optics and Photonics » 3.13 Semiconductor optical devices

[26p-E301-1~12] 3.13 Semiconductor optical devices

Sat. Mar 26, 2022 1:30 PM - 5:00 PM E301 (E301)

Taro Arakawa(Yokohama Natl. Univ.), Tomoyuki Miyamoto(Tokyo Tech)

4:30 PM - 4:45 PM

[26p-E301-11] Evaluation of InGaAsP photovoltaic device with window layer

〇Yuga Motomura1, Akira Kushiyama1, Kensuke Nishioka1, Masakazu Arai1 (1.Univ. of Miyazaki)

Keywords:InGaAsP, optical wireless power transmission, photovoltaic

We made InGaAsP photovoltaic device for 1.06µm laser grown by MOVPE. When we illuminated that's laser, short circuit current was increased by introducing window layer. But fill factor was decreased.