[26p-E301-1~12] 3.13 Semiconductor optical devices

[26p-E301-7] Crystal quality investigation of metamorphic InAsSb on GaAs substrate by thermal annealing

〇Shota Nakagawa¹, Koki Hombu¹, Yuto Iwakiri¹, Koji Maeda¹, Masakazu Arai¹ (1.Univ. of Miyazaki)

Keywords:Mid infrared, MOVPE, InAsSb

This time, we aimed to improve the crystallinity by annealing InAsSb on a GaAs substrate after growing it. Samples were prepared using the MOVPE (Metalorganic Vapourage) method, one without annealing and one with annealing at 550 ° C and 650 ° C, respectively. As a result of measuring the emission intensity by the photoluminescence (PL) method and evaluating the surface flatness by the atomic force microscope (AFM), emission that could not be confirmed without annealing was confirmed after annealing. The surface flatness was deteriorated by annealing.