[26p-F408-1~11] 16.3 Bulk, thin-film and other silicon-based solar cells

[26p-F408-9] Improvement of electrical properties of crystalline silicon heterostructures using titanium nitride/titanium oxide stacked films

〇Tetsuya Inoue¹, Kazuhiro Gotoh¹, Yasuyoshi Kurokawa¹, Noritaka Usami¹ (1.Graduate School of Eng., Nagoya Univ.)

Keywords:solar cells, titanium nitride, titanium oxide

TiO_y fabricated by atomic layer deposition has attracted much attention as a carrier-selective material for heterojunction crystalline silicon solar cells. However, it is known that the passivation performance of TiO_y is significantly degraded after metal electrode deposition. This degradation is thought to be due to the reduction of TiO_y and the diffusion of the metal into crystalline Si. In this study, we have inserted TiN_z at the Al/TiO_y interface to suppress these phenomena, and thus the passivation performance was suppressed after metalization.