〇Motohisa Usagawa¹, Yoshinobu Kawaguchi¹, Kentaro Murakawa¹, Akiko Komoda¹, Yuuta Aoki¹, Takeshi Yokoyama¹, Mizuki Tonomura¹, Kazuma Takeuchi¹, Takeshi Kamikawa¹ (1.Kyocera)

[15p-B401-1~18] 15.4 III-V-group nitride crystals

Oral presentation
｜ 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

Wed. Mar 15, 2023 1:00 PM - 6:00 PM B401 (Building No. 2)

Mitsuru Funato(Kyoto Univ.), Hiroto Sekiguchi(Toyohashi Univ. of Tech.), Daisuke Iida(KAUST)

Sat. Mar 18, 2023 1:00 PM - 1:15 PM

[18p-A202-1] [The 53rd Young Scientist Presentation Award Speech] Generation of Axisymmetric Polarized Beams from GaAs/InGaAs/GaAs Core Multi-shell Nanowire Cavity

〇Taiga Kunimoto^1,2, Shinjiro Hara^1,2, Junichi Motohisa^1,2 (1.Hokkaido Univ., 2.RCIQE)

[18p-A202-1~8] CS.6 Code-sharing Session of 8.3 & 9.2 & 13.6

Oral presentation
｜ CS Code-sharing session
| 【CS.6】 Code-sharing Session of 8.3 & 9.2 & 13.6

Sat. Mar 18, 2023 1:00 PM - 3:15 PM A202 (Building No. 6)

Takeshi Kitajima(National Defence Academy), Yukihiro Harada(Kobe Univ.)

Presentation Search

▲ [17a-PA02-11] Polarization dependence of quantum dot excitonic emission from InAsxP1-x/InP nanowire heterostructure

[17a-PA02-1~11] 9.2 Nanoparticles, Nanowires and Nanosheets

[15p-D411-2] 【Highlighted Presentation】Demonstration of vertical crystal phase junction transistor

[15p-D411-1~14] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[16a-A205-1] Selective-area growth of wurtzite InP fin by MOVPE

[16a-A205-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

△ [15p-B401-16] A novel fabrication technique of 100 μm cavity GaN-based edge emitting laser diodes using epitaxial lateral overgrowth on Si substrate

[15p-B401-1~18] 15.4 III-V-group nitride crystals

[18p-A202-1] [The 53rd Young Scientist Presentation Award Speech] Generation of Axisymmetric Polarized Beams from GaAs/InGaAs/GaAs Core Multi-shell Nanowire Cavity

[18p-A202-1~8] CS.6 Code-sharing Session of 8.3 & 9.2 & 13.6

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