16:15 〜 16:30 ▲ [16p-E102-11] Improvement in Electrical Properties of Ga2O3 Schottky Barrier Diodes by Nitrogen Radical Treatment 〇Zhenwei Wang1、Takahiro Kitada1,2、Sandeep Kumar1、Masataka Higashiwaki1,2 (1.NICT、2.OMU)