Naoto Kobayashi

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Speaker, Author, Co-Author

Thu. Mar 16, 2023 1:30 PM - 4:45 PM E102 (Building No. 12)

Oral presentation
| 21 Joint Session K "Wide bandgap oxide semiconductor materials and devices"
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16p-E102-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:15 PM - 2:30 PM

[16p-E102-4] Evaluation of line shaped voids in β-Ga₂O₃ grown by the vertical Bridgman method

〇(M1)Naoto Kobayashi¹, Keigo Hoshikawa¹, Toshinori Taishi¹ (1.Shinshu Univ.)