Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[16a-B401-1~9] 15.4 III-V-group nitride crystals

Thu. Mar 16, 2023 9:00 AM - 11:30 AM B401 (Building No. 2)

Ryota Ishii(Kyoto Univ.), Daichi Imai(Meijo Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [16a-B401-1] Evaluation of barrier energy and carrier transport property in GaN:Eu/GaN superlattices using terahertz emission spectroscopy

〇Fumikazu Murakami¹, Atsushi Takeo², Yasufumi Fujiwara², Masayoshi Tonouchi¹ (1.ILE, Osaka Univ., 2.GSE, Osaka Univ.)

9:15 AM - 9:30 AM

[16a-B401-2] Elucidation of mid-infrared emission mechanism of GaN-n⁺⁺-GaN stripe structure based on angular dependent radiation characteristics

〇Bojin Lin¹, Lai Lai aye Hnin¹, Haruki Orito¹, Kohei Ueno², Fujioka Hiroshi², Hideto Miyake³, Yoshihiro Ishitani¹ (1.Chiba Univ., 2.Univ. of Tokyo, 3.Mie Univ.)

9:30 AM - 9:45 AM

[16a-B401-3] Determination of Si donor concentration in GaN by photoluminescence method

〇(M1)Tatsuya Tsuboi¹, Hidaka Shounichi¹, Okawa Takashi², Omori Masato¹ (1.Oita Univ., 2.MIRISE Technologies)

9:45 AM - 10:00 AM

▲ [16a-B401-4] Thermal energy transport in different alloys composition with Raman Scattering

〇(D)KhaingShwe TheeEi¹, Tomoya Nakayama¹, Tatsuya Asaji¹, Daisuke Iida², Mohammed A. Najmi², Ryota Kimura¹, Yuki Kikuchi¹, Kazuhiro Ohkawa², Yoshihiro Ishitani¹ (1.Chiba Univ., 2.KAUST)

10:00 AM - 10:15 AM

[16a-B401-5] Characterization of surface carrier lifetime of InGaN (0001)
using time-resolved two-photon photoemission spectroscopy

〇Shuhei Ichikawa^1,2, Yoshinobu Matsuda³, Heishiroh Dojo¹, Osamu Maida¹, Mitsuru Funato³, Yoichi Kawakami³, Kazunobu Kojima¹ (1.Grad. Sch. of Eng., Osaka Univ., 2.Research Center for UHVEM, Osaka Univ., 3.Kyoto Univ.)

10:30 AM - 10:45 AM

△ [16a-B401-6] Polarization Control of Surface Emission from InGaN Quantum Wells by Applying External Uniaxial Stress

〇Keito Mori¹, Atsushi Yamaguchi¹, Maho Ohara², Tomohiro Makino², Rintaro Koda², Tatsushi Hamaguchi² (1.Kanazawa Inst. Tech., 2.Sony)

10:45 AM - 11:00 AM

△ [16a-B401-7] Improvement of S/N ratio in simultaneous photoacoustic and photoluminescence measurement for InGaN quantum wells by utilizing Helmholtz resonance

〇Hiroki Tosa¹, Keito Mori-Tamamura¹, Atsushi A. Yamaguchi¹ (1.Kanazawa Inst. Tech)

11:00 AM - 11:15 AM

[16a-B401-8] Photoluminescence lifetimes of red light emitting In_0.35Ga_0.65N/GaN quantum wells

〇Liyang Li¹, Kohei Shima¹, Daisuke Iida², Kazuhiro Ohkawa², Shigefusa F. Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Kaust)

11:15 AM - 11:30 AM

▲ [16a-B401-9] Spatial- and time-resolved photoluminescence at high temperatures on green-emitting InGaN/GaN single quantum well grown on epitaxially laterally overgrown GaN

〇(D)Zhaozong Zhang¹, Ryota Ishii¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

Session information

[16a-B401-1~9] 15.4 III-V-group nitride crystals

△ [16a-B401-1] Evaluation of barrier energy and carrier transport property in GaN:Eu/GaN superlattices using terahertz emission spectroscopy

[16a-B401-2] Elucidation of mid-infrared emission mechanism of GaN-n⁺⁺-GaN stripe structure based on angular dependent radiation characteristics

[16a-B401-3] Determination of Si donor concentration in GaN by photoluminescence method

▲ [16a-B401-4] Thermal energy transport in different alloys composition with Raman Scattering

[16a-B401-5] Characterization of surface carrier lifetime of InGaN (0001)
using time-resolved two-photon photoemission spectroscopy

△ [16a-B401-6] Polarization Control of Surface Emission from InGaN Quantum Wells by Applying External Uniaxial Stress

△ [16a-B401-7] Improvement of S/N ratio in simultaneous photoacoustic and photoluminescence measurement for InGaN quantum wells by utilizing Helmholtz resonance

[16a-B401-8] Photoluminescence lifetimes of red light emitting In_0.35Ga_0.65N/GaN quantum wells

▲ [16a-B401-9] Spatial- and time-resolved photoluminescence at high temperatures on green-emitting InGaN/GaN single quantum well grown on epitaxially laterally overgrown GaN

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Session information

[16a-B401-1~9] 15.4 III-V-group nitride crystals

△ [16a-B401-1] Evaluation of barrier energy and carrier transport property in GaN:Eu/GaN superlattices using terahertz emission spectroscopy

[16a-B401-2] Elucidation of mid-infrared emission mechanism of GaN-n++-GaN stripe structure based on angular dependent radiation characteristics

[16a-B401-3] Determination of Si donor concentration in GaN by photoluminescence method

▲ [16a-B401-4] Thermal energy transport in different alloys composition with Raman Scattering

[16a-B401-5] Characterization of surface carrier lifetime of InGaN (0001)using time-resolved two-photon photoemission spectroscopy

△ [16a-B401-6] Polarization Control of Surface Emission from InGaN Quantum Wells by Applying External Uniaxial Stress

△ [16a-B401-7] Improvement of S/N ratio in simultaneous photoacoustic and photoluminescence measurement for InGaN quantum wells by utilizing Helmholtz resonance

[16a-B401-8] Photoluminescence lifetimes of red light emitting In0.35Ga0.65N/GaN quantum wells

▲ [16a-B401-9] Spatial- and time-resolved photoluminescence at high temperatures on green-emitting InGaN/GaN single quantum well grown on epitaxially laterally overgrown GaN

Authenticate

[16a-B401-2] Elucidation of mid-infrared emission mechanism of GaN-n⁺⁺-GaN stripe structure based on angular dependent radiation characteristics

[16a-B401-5] Characterization of surface carrier lifetime of InGaN (0001)
using time-resolved two-photon photoemission spectroscopy

[16a-B401-8] Photoluminescence lifetimes of red light emitting In_0.35Ga_0.65N/GaN quantum wells